1 transistor 2SD2441 silicon npn epitaxial planer type for low-frequency output amplification n features l mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing. n absolute maximum ratings (ta=25?c) unit: mm parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature 1:base 2:collector eiaj:scC62 3:emitter mini power type package 4.5 0.1 2.6 0.1 2.5 0.1 0.4max. 1.0 +0.1 ?.2 4.0 +0.25 ?.20 3.0 0.15 1.5 0.1 0.4 0.08 0.5 0.08 1.5 0.1 0.4 0.04 1.6 0.2 45 marking 321 symbol v cbo v ceo v ebo i cp i c p c * t j t stg ratings 10 10 7 2 1.5 1 150 C55 ~ +150 unit v v v a a w ?c ?c n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage transition frequency collector output capacitance forward voltage symbol i cbo v cbo v ceo v ebo h fe v ce(sat) f t c ob v f *1 conditions v cb = 7v, i e = 0 i c = 10 m a, i e = 0 i c = 1ma, i b = 0 i e = 10 m a, i c = 0 v ce = 1v, i c = 400ma *2 i c = 1a, i b = 25ma *2 v cb = 60v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz i f = 500ma min 10 10 7 200 typ 0.17 190 50 max 1 700 0.25 1.3 unit m a v v v v mhz pf v *1 applicable to the built-in diode. *2 pulse measurement * printed circuit board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion marking symbol : 1v
2 transistor 2SD2441 p c ta i c v ce i c v be v ce(sat) i c h fe i c f t i e c ob v cb 0 160 40 120 80 140 20 100 60 0 1.4 1.2 0.4 1.0 0.8 0.2 0.6 printed circut board: copper foil area of 1cm 2 or more, and the board thickness of 1.7mm for the collector portion. ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 ta=25?c 2.5ma 2.0ma 1.5ma 1.0ma 0.5ma i b =3.0ma collector to emitter voltage v ce ( v ) collector current i c ( w ) 01.2 1.0 0.8 0.2 0.6 0.4 0 2.4 2.0 1.6 1.2 0.8 0.4 v ce =1v ta=75?c ?5?c 25?c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =50 25?c ?5?c ta=75?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 600 500 400 300 200 100 ta=75?c 25?c ?5?c v ce =1v collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 600 500 400 300 200 100 v cb =6v f=200mhz ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 120 100 80 60 40 20 i e =0 f=200mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf )
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